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</o:shapelayout></xml><![endif]--></head><body lang=EN-US link=blue vlink=purple><div class=WordSection1><p class=MsoNormal><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'><o:p> </o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:16.0pt;font-family:"Tahoma","sans-serif"'>MS Thesis Defense<o:p></o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'><o:p> </o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:14.0pt;font-family:"Tahoma","sans-serif"'>Heteroepitaxial Growth of Silicon and Germanium Thin Films on <o:p></o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:14.0pt;font-family:"Tahoma","sans-serif"'>Flexible Metal Substrate by Magnetron Sputtering</span></b><span style='font-size:14.0pt;font-family:"Tahoma","sans-serif"'><o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:14.0pt;font-family:"Tahoma","sans-serif"'><o:p> </o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:14.0pt;font-family:"Tahoma","sans-serif"'>Renjie Wang<o:p></o:p></span></b></p><p class=MsoNormal align=center style='text-align:center'><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'><o:p> </o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-size:13.0pt;font-family:"Tahoma","sans-serif"'>Date:</span></b><span style='font-size:13.0pt;font-family:"Tahoma","sans-serif"'> <b>Monday, November 26th, 2012</b><o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'> <o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-family:"Calibri","sans-serif"'>Location:</span></b><span style='font-family:"Calibri","sans-serif"'> Mechanical Engineering Large Conference Room</span><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'><o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-family:"Calibri","sans-serif"'>Time:</span></b><span style='font-family:"Calibri","sans-serif"'> 10:00 am</span><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'><o:p></o:p></span></p><p class=MsoNormal><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'> </span><span style='font-family:"Calibri","sans-serif"'><o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><b><span style='font-family:"Calibri","sans-serif"'>Committee Members: </span></b><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'><o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='font-family:"Calibri","sans-serif"'>Dr. Venkat Selvamanickam<o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'>Dr. Jae-Hyun Ryou<o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='font-family:"Calibri","sans-serif"'>Dr. James K. Meen<o:p></o:p></span></p><p class=MsoNormal align=center style='text-align:center'><span style='font-size:11.0pt;font-family:"Calibri","sans-serif"'> <o:p></o:p></span></p><p class=Default align=left style='text-align:left'><span style='color:windowtext;mso-fareast-language:ZH-CN'>High mobility single-crystalline-like Ge thin films </span><span style='font-size:11.5pt;line-height:200%;color:windowtext'>have been demonstrated on</span><span style='color:windowtext;mso-fareast-language:ZH-CN'> inexpensive polycrystalline metallic substrates buffered with an oxide buffer layer. Doped films of p-type and n-type were fabricated using </span><span style='font-size:11.5pt;line-height:200%;color:windowtext'>radio frequency</span><span style='color:windowtext;mso-fareast-language:ZH-CN'> magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and hall mobility. As defect density in Ge is directly related to the CeO<sub>2</sub> buffer, the effect of CeO<sub>2 </sub>layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers including metals, nitrides and silicides are studied. It has been shown that NiSi<sub>2</sub> thin films deposited on the TiN/MgO template exhibit characteristics of biaxial texture, promising for heteroepitaxial growth of Ge and Si.<o:p></o:p></span></p><p class=MsoNormal style='margin-bottom:12.0pt'><span style='font-family:"Calibri","sans-serif";color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal><o:p> </o:p></p></div></body></html>