[CCoE Notice] ECE Seminar Series: Reliability Analysis of Silicon Carbide Power Devices - Monday, 23 March at 10 AM, online via ZOOM

[Knudsen, Rachel W]

Reliability Analysis of Silicon Carbide Power Devices
[Dr. Stephen Bayne Professor and Associate Chair of Graduate Studies Texas Tech University   Monday, 23 March 2020, 9.55 AM  Room: ZOOM* (https://zoom.us/j/478689422; Meeting ID: 478 689 422) *Due to COVID-19 outbreak, the presentation will be online.]<https://zoom.us/j/478689422>[Stephen Bayne]

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For decades, silicon has been the material of choice for the vast majority of semiconductor devices.  However, in recent years, power semiconductor devices made of wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are increasingly becoming available on the commercial market and are experiencing widespread adoption in many high power and high-voltage applications such as DC-DC converters, inverters, battery chargers, industrial motor drives, and solid-state pulse generators, to name a few.  The higher bandgap and inherent thermal properties of the WBG materials allow for advantages over traditional silicon devices including higher blocking voltages, increased switching speeds, physically smaller implementations of application circuits, improved system efficiencies and higher operating temperatures.  Despite these clear advantages, the full potential of WBG technology will not be realized until the overall industry confidence in the long-term reliability of WBG devices is increased.  To that end, Texas Tech University (TTU), with funding from PowerAmerica, has conducted extensive testing on commercially available SiC MOSFETs and diodes, to determine the overall reliability of these devices as well as any potential issues.  TTU developed testbeds for the following tests: high temperature gate bias (HTGB), high temperature reverse bias (HTRB), high temperature operating life (HTOL), time dependent dielectric breakdown (TDDB), short circuit, diode surge current, avalanche, di/dt, dv/dt, and hard switching.  The purpose of this presentation is to give an overview of WBG power semiconductor device testing, as well as a discussion of some of the results from the TTU PowerAmerica project.

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