[CCoE Notice] MS Thesis Presentation

[Abercrombie, Irene F]

MS Thesis Defense

Heteroepitaxial Growth of Silicon and Germanium Thin Films on
Flexible Metal Substrate by Magnetron Sputtering

Renjie Wang

Date: Monday, November 26th, 2012

Location: Mechanical Engineering Large Conference Room
Time: 10:00 am

Committee Members:
Dr. Venkat Selvamanickam
Dr. Jae-Hyun Ryou
Dr. James K. Meen


High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with an oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers including metals, nitrides and silicides are studied. It has been shown that NiSi2 thin films deposited on the TiN/MgO template exhibit characteristics of biaxial texture, promising for heteroepitaxial growth of Ge and Si.


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